摘要
介绍了用有限元方法计算半导体方块电阻四探针测试中二维点电流势场的模型并且证明了其正确性。由于有限元方法对边界没有限制，该方法为方块电阻测试中精确确定边界修正系数，更重要的是为微样品测试结构确定提供直接明了的理论依据。
A model of calculating electric potential of two dimension point current in measurement of sheet resistance with four-point probe by FEM is presented and its correctness is verified furthe.As it is limitless for FEM in any boundary shapes,it provides the theory basis for finding revised coefficient to boundary accurately,more importantly,for finding microfigures of measurement.
出处
《半导体情报》
1996年第6期30-33,共4页
Semiconductor Information
基金
国家自然科学基金
关键词
方块电阻
四探针
有限元
测试
s: Sheet resistance,Four-point probe,FEM
