摘要
采用射频磁控反应溅射法,以高纯Si为靶材,高纯O2和N2气为反应气体,在蓝宝石衬底上制备了氧化硅和氮化硅薄膜。讨论了N2气流量、射频功率、溅射气压和靶基距等工艺参数对Si3N4薄膜沉积速率的影响规律。结果表明:随N2气流量的增加,沉积速率先降低,最后趋于稳定;随射频功率增加,沉积速率增加;随溅射气压和靶基距增加,沉积速率先增后减。同时,高温强度试验和FTIR测试结果表明:在800℃时,镀膜后蓝宝石的弯曲强度比镀膜前提高了50.2%;平均透过率净增加8%以上,达到了很好的增透保护效果。
SiO2 and Si3N4 thin films had been prepared on sapphire substrate by radio frequency magnetron reactive sputtering with high pure Si disc as the target and high pure O2 and N2 as reactive gas. The influences of experimental parameters, such as nitrogen flow rate, sputtering power, sputtering pressure and target-substrate distance, on the deposition rate of Si3N4 films were studied systematically. The results were as follows： The deposition rate firstly decreases with increasing nitrogen flow rate, and then, nearly constant; The deposition rate increases with increasing R.F power; With sputtering pressure and target-substrate distance increasing, the deposition rate firstly increases and then decreases after reaching a maximum; The experimental results of high-temperature strength and FI＇IR confirm that high temperature strength increases 50.2% and FITIR increases 8% compared with uncoating films. Therefore, coating method obviously improves optical and mechanical properties of sapphire.
出处
《兵器材料科学与工程》
CAS
CSCD
北大核心
2006年第5期9-12,共4页
Ordnance Material Science and Engineering
基金
国防"十五"预研基金资助项目(41312040402)
关键词
蓝宝石
氮化硅
高温强度
透过率
镀膜
sapphire
Si3N4
high temperature strength
transmission
coating
