摘要
采用有效质量框架下一维有限深势阱模型对InGaAsP多量子阱的组分和阱宽之间的关系进行了计算,利用更符合实验结果的Harrison模型来计算带阶,分别就晶格匹配和应变补偿两种情况进行了比较计算,最后根据要制作的全光功能开关的性能指标对计算结果进行了选择,得到最适合于制作光开关的材料。
The Kronig-Peney model is applied to calculate the relationship between the vitiation of the composition and well width in InGaAsP multiple quantum wells. In order to make the result more exactly, Harrison model is used to calculate △Ec and △Ev, lattice matching and compensated strain are calculated, respectively. By the calculation, the best is chosen according to the absorption coefficient for the next experiment phase.
出处
《光学与光电技术》
2006年第5期63-65,共3页
Optics & Optoelectronic Technology
基金
国家自然科学基金(60477024)资助项目
关键词
全光功能开关
自旋弛豫时间
INGAASP
组分
阱宽
all optical polarization switching
spin relaxation time
InGaAsP
composition
well width
