摘要
从理论与实验两方面研究了ＧａＡｓ定向耦合型行波光调制器。首次报导了重掺杂ｎ＋型薄层对电场分量相当于导体，对磁场分量相当于绝缘体这一发现；首次提出了一种具有对称宽电极的新型结构，并研制成功开关电压为８．５Ｖ，微波折射率约为３．６，在３０ＧＨｚ情况下传输损耗小于１０ｄＢ／ｃｍ，根据ｓ参数测试３ｄＢ带宽达到３２ＧＨｚ的行波调制器。
The traveling wave directional coupler modulators on GaAs have been studied in theory and experiment. We found that the n+ layer can be treated as a Perfect conductor for electric field and as an insulator for magnetic field at first time. We proPOsed a new structure of traveling wave modulator with a symmetric and wide electrode. The device switch voltage is 8. 5V, microwave index is about 3. 6, the transmission loss is less than 10dB/cm at 30 GHz, and the 3dB optical modulation bandwidth is greater than 32 GHz (by the measured s-parameter).
出处
《高技术通讯》
CAS
CSCD
1996年第4期24-27,共4页
Chinese High Technology Letters
基金
863计划
国家自然科学基金
关键词
砷化镓
行波
调制器
GaAs, Traveling wave, Modulator
