摘要
Two hole-transporting materials containing carbazole moieties with TPD- and NPB-like structures, 4,4′-bis [ N- （4-carbazolylphenyl） -N-phenylamino ] biphenyl （ CPB ） and 4,4′-bis [ N- （ 4-carbazolylphenyl ） -N- （ 1-naphthyl ） amino] biphenyl（ CNB）, were synthesized via a modified Ullmann reaction. The resulting compounds were thermally stable with high glass transition temperatures ranging from 145 to 147 ℃ and possessed a good electrochemical reversibility and hole-transporting properties. Typical double-layer device evaluation with the structure ITO/CPB（40 nm）/ Alq3 （60 nm）/LiF/Al demonstrated that they were promising hole-transporting materials with a current efficiency of 5.25 cd/A and a power efficiency of 2.00 lm/W.
Two hole-transporting materials containing carbazole moieties with TPD- and NPB-like structures, 4,4′-bis [ N- （4-carbazolylphenyl） -N-phenylamino ] biphenyl （ CPB ） and 4,4′-bis [ N- （ 4-carbazolylphenyl ） -N- （ 1-naphthyl ） amino] biphenyl（ CNB）, were synthesized via a modified Ullmann reaction. The resulting compounds were thermally stable with high glass transition temperatures ranging from 145 to 147 ℃ and possessed a good electrochemical reversibility and hole-transporting properties. Typical double-layer device evaluation with the structure ITO/CPB（40 nm）/ Alq3 （60 nm）/LiF/Al demonstrated that they were promising hole-transporting materials with a current efficiency of 5.25 cd/A and a power efficiency of 2.00 lm/W.
