摘要
采用镶嵌靶、通过直流磁控溅射法在不加热的情况下于硅基片上制备了Ti-49．57％Ni-5．6％Cu合金薄膜。XRD图谱表明,该薄膜为非晶态。对其进行的退火晶化后的形状记忆性能研究发现:薄膜分别经550℃×0．5 h、650℃×0．5 h晶化处理后无残余塑变存在下的最大恢复应力、最大恢复应变分别为180 MPa、2．7％;90 MPa、1．4％。
A Ti-49.57% Ni-5.6% Cu alloy thin film was prepared on silicon chip with mosaic target by DC magnetron sputtering under non-heating condition. The thin film was proved to be amorphous by XRD spectrogram. The study results of the shape memory property of the film after annealing and crystallization show that the film has 180 MPa of maximum recovery stress and 2.7% of maximum recovery strain after crystallization treatment at 550℃ for 0.5 h under no remaining galling condition, while has 90 MPa of maximum recovery stress and 1.4% of maximum recovery strain after crystallization treatment at 650℃ for 0.5 h under no remaining galling condition.
出处
《电镀与涂饰》
CAS
CSCD
2006年第9期13-15,共3页
Electroplating & Finishing
关键词
硅基片
直流磁控溅射
TiNiCu薄膜
非晶态
晶化
退火
形状记忆
恢复应力
恢复应变
silicon chip
DC magnetron sputtering
TiNiCu thin film
amorphous state
crystallization
annealing
shape memory
recovery stress
recovery strain
