摘要
采用有限差分算法,对双门聚焦结构的场致发射阵列阴极进行了三维模拟计算,得到了锥尖处的电场强度,电子的运动轨迹及电位分布图。结果表明,聚焦极电位、聚焦极孔半径及聚焦极与栅极间距的变化对锥尖电场影响不大,但对电子轨迹影响很大。当聚焦极电位超过140V时,电子束的会聚作用消失;低于-30 V时,电子束轨迹出现交叉。减小聚焦极孔径可以加强电子束的会聚作用,但当其减小至0.75μm时,聚焦极会捕获部分边缘电子。因此在实际确立聚焦极参量时,应主要从聚焦极对电子束轨迹的会聚作用方面考虑,其次再考虑聚焦极对锥尖场强的影响。
Three-dimensional structure of double gate focus field emission array is simulated by using finite difference algorithm to obtain the electric field,electron trajectory and electronic potential profile. The results show that changing the potential and diameter of focus electrode,and the space between the grid electrode and focus electrode doesn＇t affect the electric field seriously, but has strong influence on electron traiectory. The focusing effect disappears when the focus electrode voltage is more than 140 V. The electron trajectories become crossed when the focus electrode voltage is less than 30 V. The electrons focusing effect becomes stronger as the diameter of focus electrode reduces,but when diameter of focus electrode is reduced to 0.75 μm,the focus electrode captures the edge electrons. The electrons focusing effect should be firstly taken into consideration in establishing focus electrode parameters,and the influence of the tip electric field should be also considered.
出处
《半导体光电》
EI
CAS
CSCD
北大核心
2006年第4期434-436,458,共4页
Semiconductor Optoelectronics
关键词
聚焦极
场致发射
电子运动轨迹
有限差分
focus electrode
field emission
electron trajectory
finite difference
