摘要
利用扫描电子显微镜、Ｘ－射线衍射仪，分光光度计和Ｃ－Ｖ测试仪对电沉积法制备的多晶砷化镓薄膜进行了测试．结果表明薄膜的成分接近化学计量的ＧａＡｓ．根据薄膜的光吸收曲线和Ｍｏｔｔ－Ｓｃｈｏｔｔｋｙ曲线计算了带隙值和能级位置．最后，测量了薄膜／电解液结的光电特性．
Abstract Electrodeposition technology for preparation of GaAs film is described. The characteristics of the films were measured by using SEM, X-ray diffractometer, spectrophotometer and C-V tester. Measurement results show that the atomic ratio of the film deposited is Ga0.91As1.09. On the basis of Mott-Schottky Plot the Parameters of the energy band were found. Finally, the photoelectro chemical characteristics of.the Ga0.91As1.09 film/electolyte junction cell were measured.
