摘要
首次采用椭偏光谱仪检测ＨＦ缓冲溶液（ＢＨＦ）处理的Ｓｉ（１１１）表面在空气中的化学稳定性．研究表明：随着Ｓｉ暴露在空气中时间的增长，Ｓｉ的赝介电常数虚部ε２的Ｅ２临界点峰值随之下降，而Ｅ１临界点峰值却随之上升；在ｐＨ＝５．３的ＢＨＦ中腐蚀，再经去离子水漂洗后，可得到较稳定的Ｓｉ（１１１）表面，在空气中一小时之内基本不氧化．
Abstract The chemical stability of Si (111 ) surface treated with various BHF solution (pH= 3. 8￣6. 5) is studied by spectroscopic ellipsometer in air. The results show that the values at E2(4. 22eV) and E, (3. 4eV) critical points showing in the imaginary part of the pseudo dielectric constant declines and increases, respectively, after the Si(111) surface is treated by BHF solution; and that when the PH value of BHF solution is about 5. 3, the Si (111) surface is basically stable in air and is not oxidized within one hour.
基金
浙江大学硅材料科学国家重点实验室基金
