摘要
采用连通式双反应室高温MOCVD系统在Si衬底上外延ZnO薄膜,通过卢瑟福背散射/沟道(RBS/C)及高分辨X射线衍射(HR-XRD)技术对不同衬底条件的ZnO外延膜进行了组分及结构分析,结果表明在采用SiC缓冲层后,Si(111)衬底上ZnO(0002)面衍射峰半高宽明显减小,缺陷密度降低,单晶质量显著变好,c轴方向应变由0·49%变为-0·16%,即由拉应变变为压应变且应变值变小,说明SiC缓冲层可以有效地减小ZnO与Si衬底晶格失配带来的应变,改善外延膜质量,实现Si衬底上单晶ZnO的生长.
High-quality ZnO thin films are deposited on different Si substrates by double-connected low pressure metal-organic chemical vapor deposition （LP-MOCVD）. Their composition and structural characteristics are characterized using Rutherford backscattering （RBS）/channeling and X-ray diffraction （XRD） technology. The sample with a SiC buffer layer on the Si（111 ） substrate has a smaller full-width at half maximum of XRD （0002） reflection, and the elastic strain of the c axis with a smaller value is changed from positive to negative. These results show that the SiC buffer layer can reduce the strain from the lattice mismatch between ZnO and the Si substrate and improve the quality of single-crystal ZnO films.
基金
国家自然科学基金(批准号:10375004
90201038
50472009)
中国比利时科技合作(批准号:BIL04/05)资助项目~~
