摘要
随着VLSI集成度的提高,金属化互连线的几何尺寸亦不断缩小,电迁移成为更为严重的可靠性问题,电迁移评估技术也越来越多。本文全面地总结了各种电迁移评估技术。
As the VLSI integration level advanced, metal interconnect is narrowing, so the electro migration has been a serious reliability issue, meanwhile more and more the electro migration evaluation technology appeared. The article thoroughly summarized the electro migration evaluation technologies.
出处
《电子质量》
2006年第8期30-32,共3页
Electronics Quality
关键词
电迁移
速度漂移
低频噪声
Trace法
晶片级
Electro migration
Speed drifting
Low frequency noise
Trace technique
Chip-scale
