摘要
采用光束均匀器，改善ＸｅＣｌ准分子激光器输出光束强度的分布，其起伏优于２％，用这一装置测量了Ｃ６０薄膜的刻蚀阈值。
A beam homogenizer was used to improve the intensity distribution of the output beam from XeCl excimer laser. The results demonstrated that the irradiation uniformity was better than 2%. Using this apparatus, the etch threshold of solid thin film was measured and excimer laser induced electrical conductivity in C 60 thin film has been studied experimentally.
出处
《光学学报》
EI
CAS
CSCD
北大核心
1996年第10期1379-1382,共4页
Acta Optica Sinica
基金
高技术青年基金
