摘要
半导体材料的折射率是光频率的函数,所以在计算光子晶体的能带结构时必须考虑到色散关系。光子晶体存在光子禁带在反射谱上表现为高反射率带。本文已GaAs基材料为例,利用传输矩阵方法计算了考虑色散后的一维光子晶体的反射谱,计算结果表明考虑色散后的光子晶体禁带的宽度较不考虑色散关系的光子晶体的带隙要窄,如果光子晶体中存在缺陷则考虑色散后的光子晶体缺陷态的位置较不考虑色散关系时红移,且光子损耗较小。
Refraction index of semiconductor material is a function of optical frequency, called dispersion relation. Thus when one calculates the energy band ofphotonic crystal, the dispersion relation of material must be considered. In this paper, for example, the forbidden band of I-D photonic crystal made up of GaAs/AIAs is calculated by transfer matrix method. It is shown that the forbidden band, of which the dispersion relation of the two materials is considered, is narrower than the other. The defect state will bring red shift if the dispersion relation of materials is considered.
出处
《光电工程》
EI
CAS
CSCD
北大核心
2006年第7期127-130,共4页
Opto-Electronic Engineering
基金
北京市教委科技发展计划面上项目(KM200610009014)
关键词
光子晶体
禁带
色散关系
Photonic crystal
Forbidden band
Dispersion relation
