摘要
测量了各种温度下玻璃中掺杂纳米尺寸ＣｄＳ半导体微晶的光致发光光谱，研究了其光致发光带的峰值能量和线宽对温度的依赖关系．考虑ＣｄＳ微晶的ＬＯ声子的相互作用，拟合了其带隙发光带的线宽随温度的变化曲线，获得样品的非均匀线宽．ＣｄＳ微晶的非均匀线宽主要是由于微晶的尺寸分布引起的．
The photoluminescence spectra of nanometer-size CdS semiconductor microcrystallites doped in glass were measured at various temperatures. The temperature dependence of the peak energy and linewidth of the band-gap luminescence was investigated.Taking the LO phonon interaction into account, the linewidths of the luminescence as a function of temperature were fitted. The inhomogenous broadening constant was obtained and mainly associated with the size distribution of CdS microcrystallites.
出处
《发光学报》
EI
CAS
CSCD
北大核心
1996年第1期23-27,共5页
Chinese Journal of Luminescence
基金
国家自然科学基金
中国科学院激发态物理开放实验室基金
关键词
光致发光
半导体微晶
线宽
硫化镉
photoluminescence, CdS semiconductor microcrystallites, linewidth
