摘要
本文由光谱烧孔的发光动力学方程出发，推导了脉冲光烧孔并选通的情况下量子效率的表达式．在７７Ｋ下测量了以不同功率的５６０ｎｍ脉冲光烧孔并选通的条件下，孔深随烧孔脉冲数目的变化，验证了烧孔的量子效率与选通光强度的关系．在相同的烧孔条件下测量了ＢａＦ（Ｃｌ，Ｂｒ）∶Ｓｍ（２＋）与ＳｒＦ（Ｃｌ，Ｂｒ）∶Ｓｍ（２＋）的孔深随脉冲数目的变化，验证了量子效率与５ＤＪ－７Ｆ０跃迁几率的关系．
n this paper we derived hole-burning quantum efficiency by the luminescent dynamical equations under the condition of pumping and gating with a pulsed laser. Holeburning were perfomed at 77K by a 560 nm laser with different laser power. The dependence of hole depth on pulse number were observed and hole burning quantum efficiency with different laser power were obtained. The dependence of hole-burning quantum efficiency on 5DJ-7F0 transition probability were proved by measuring the dependence of hole depth on pulse number in BaF(Cl,Br): Sm2+ and in SrF(Cl,Br): Sm2+ under the same burning condition.
出处
《发光学报》
EI
CAS
CSCD
北大核心
1996年第1期12-16,共5页
Chinese Journal of Luminescence
关键词
光谱烧孔
量子效率
跃迁几率
hole burning, quantum efficiency, transition probability
