摘要
The electroplating behavior of nanocrystalline CoNiFe soft magnetic thin film with high saturation magnetic flux density (Bs>2.1 T) and low coercivity (Hc) was investigated using cyclic voltammetry and chronoamperometry methods in conjunction with the scanning electron microscopy (SEM/EDX). The results show that, under the experimental conditions, the co-deposition of CoNiFe film behaves anomalously due to the atomic radii of iron series elements following the order of rFe>rCo>rNi. In the case of lower electroplating current density, the co-deposition of CoNiFe film follows a 3-D progressive nucleation/growth mechanism, while in the case of higher electroplating current density, which follows a 3-D instantaneous nucleation/growth mechanism. Meanwhile, the change of nucleation mechanism of CoNiFe film with electroplating current density was interpreted theoretically in the light of quantum chemistry.
The electroplating behavior of nanocrystalline CoNiFe soft magnetic thin film with high saturation magnetic flux density （B3〉 2.1 T） and low coercivity （He） was investigated using cyclic voltammetry and chronoamperometry methods in conjunction with the scanning electron microscopy （SEM/EDX）. The results show that, under the experimental conditions, the co-deposition of CoNiFe film behaves anomalously due to the atomic radii of iron series elements following the order of rFe〉rCo〉rNi. In the case of lower electroplating current density, the co-deposition of CoNiFe film follows a 3-D progressive nucleation/growth mechanism, while in the case of higher electroplating current density, which follows a 3-D instantaneous nucleation/growth mechanism. Meanwhile, the change of nucleation mechanism of CoNiFe film with electroplating current density was interpreted theoretically in the light of quantum chemistry.
出处
《中国有色金属学会会刊：英文版》
EI
CSCD
2006年第3期659-665,共7页
Transactions of Nonferrous Metals Society of China
关键词
CoNiFe
纳米晶薄膜
软磁材料
脉冲电镀
晶化机制
nanocrystalline CoNiFe film
soft magnetism
pulse-reverse electroplating
anomalous co-deposition
electrocrystallization mechanism
