摘要
介绍了应用在PROM器件中的Ni-Cr熔丝电阻的设计.熔丝是决定PROM器件稳定性的关键元件.Ni-Cr薄膜材料有良好的半导体加工特性和温度稳定性.通过热学分析和测试实验,得到相关数据,设计出熔丝形状以及三维尺寸.再根据此集成电路器件的整体版图布局设计出可应用到PROM中的Ni-Cr熔丝.采用磁控溅射方法,通过控制工艺条件得到所需的薄膜厚度,经光刻形成所需图形.通过产品的读取测试实验,取得了良好的效果.
The design of Ni-Cr fuse resistor used in PROM Deviceis introduced. The fuse is a crucial factor affecting the stability of PROM devises. Ni-Cr thin film has excellent characteristics of semiconductor process and good temperature stability. Through calorifics analysis and experiments, relevant useful data can be obtained, fuse＇s shape and its three-dimension size can be designed. The Ni-Cr fuse must designed match with the whole layout design of PROM. Magnet-controlled sputtering approach was adopted to obtain thin film with the suitable thickness, and then, the graph of design is formed by photo etching. The expectant results are gained with the read operations.
出处
《沈阳工业大学学报》
EI
CAS
2006年第3期315-317,共3页
Journal of Shenyang University of Technology
