摘要
对硅片直接键合/绝缘体上硅(SDB/SOI)双极电路的退化机理进行了描述。在基极-发射极反向偏置的条件下,研究了应力作用时间与器件参数的退化关系。实验结果表明,电流放大倍数β与退化时间的平方根呈线性关系;不同的反向偏压下,退化的速度也不同。建立了器件的退化模型,对双极器件在使用条件下的可靠性进行了分析。
Degradation mechanism of silicon direct bonding/silicon-on-insulator （SDB/SOI） bipolar devices is discussed. The relation of stress time to parameter degradation is investigated under the condition of reverse bias of base-emitter junction. Experimental results show that the current gain exhibits a linear relationship with the square root of the stress time, and that the current gain degradation varies with different reverse bias of base-emitter junction, A model for device degradation was established, with which the reliability of bipolar devices under operation condition is analyzed.
出处
《微电子学》
CAS
CSCD
北大核心
2006年第3期269-271,共3页
Microelectronics
基金
模拟集成电路国家重点实验室资助项目(51433020101DZ1504)
