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CMOS图像传感器中低FPN列读出电路的设计 被引量:3

Design for Column Readout Circuit with FPN Reduction in CMOS Image Sensor
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摘要 针对CMOS有源像素传感器,提出一种降低固定模式噪声(FPN)的列读出电路。通过对普通列读出电路进行改进,在双采样电路基础上,增加了失调电压补偿过程。数学分析和电路模拟结果表明双采样技术可以消除像素内产生的固定模式噪声,采用失调电压补偿技术可以将运算放大器带来的列FPN从毫伏级降为微伏级。该电路已应用于640×480CMOS图像传感器中,满足低功耗(16.5μW)和窄列宽(8μm)的要求,并在CHRT0.35μm工艺下成功流片,测试结果表明电路可将固定模式噪声降低到1mV以下,有效改善电路性能。 A column readout circuit to reduce fixed pattern noise(FPN)for CMOS active pixel sensor imagers is presented. The traditional readout circuit is improved by offset compensation based on double sampling technique. The mathematical analysis and circuit simulation suggest that the FPN arising from the pixel parameter variations can be eliminated by double sampling, and the column FPN due to the operational amplifier can be reduced from milivolt to microvolt by offset compensation technique. The circuit is implanted in the system of 640 × 480 CMOS imager sensor, and achieves low power(16.5μW) and small column pitch(8μW). It is successfully taped out with CHRT 0. 35μm process, the test result shows that FPN was reduced under 1 mV, which will improve circuit performance.
出处 《传感技术学报》 EI CAS CSCD 北大核心 2006年第3期697-701,共5页 Chinese Journal of Sensors and Actuators
基金 天津市科技攻关项目(033183911)
关键词 CMOS图像传感器 固定模式噪声 双采样 失调电压补偿 CMOS imager sensors fixed pattern noise double sampling offset compensation
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参考文献6

  • 1Fossum E R. CMOS Image Sensor: Electronic Camera on a Chip [J]. IEEE Transactions on Electron Devices, 1997, 44( 10 ): 1689-1698.
  • 2Matou K, Ni Y. Precise FPN Compensation Circuit for CMOS APS [ imager ][J]. Electronics Letters, 2002, 38( 19 ):1078-1079.
  • 3Razavi B. Design of Analog CMOS Integrated Circuits[M].Boston: McGrow-Hill, 2001. 463-471.
  • 4Kavadias S. Offset-Free Column Readout Circuit for CMOS Image Sensors[J]. Electronics Letters, 1999, 35( 24 ):2112-2113.
  • 5Degerli Y, Lavernhe F, Magna P, et al.Column Readout Circuit with Global Charge Amplifier for CMOS APS Imagers[J]. Electronics Letters, 2000, 36( 17 ): 1457-1459.
  • 6Alien P E. CMOS Analog Circuit Design [M]. Beijing:House of Electronics Industry, 2002. 310-312.

同被引文献24

  • 1张文普,袁祥辉,潘银松,吕果林,黄友恕.采用电流镜积分读出电路的X射线图像传感器[J].光电工程,2005,32(2):71-74. 被引量:1
  • 2王自强,池保勇,王志华.CMOS可变增益放大器设计概述[J].微电子学,2005,35(6):612-617. 被引量:19
  • 3温志渝,陈刚,王建国.基于Fabry-Perot腔阵列的集成化微型光谱仪方案及模拟[J].光谱学与光谱分析,2006,26(10):1955-1959. 被引量:8
  • 4GAO J,CHEN Z J,hI W G,et al.Correlated double sample design for CMOS image readout IC[J].Solid.State and Integrated Circuits Technology,2004,2(7):1437-1440.
  • 5WEY H M,GUGGENBUHL W.An improved correlated double sampling circuit for low noise charge coupled devices[J].Circuits and Systems,1990,37(12):1559-1565.
  • 6CEPERIC V,BUTKOVIC Z,BARIC A.Design and optimization of self-biased complementary folded cascade[C]//Proc of Benalmádena(Málaga),MELECON:Electrotechnical Conf.Valletta,Malta.2006:145-148.
  • 7YAVARI M,SHOAEl O.Low-voltage low-power fast-setding CMOS operational tranaconductance amplifiers for switched-capacitor applications[J].Circuits,Devices and Systems,2003,15l(6):573-578.
  • 8J HOE D H K,RIBNER D B.An auto-ranging photodiode preamplifier with 114 dB dynamic range[J].JSSC,1996,31(2):187-194.
  • 9Jerman J H, Clift D J, Mallisnson S R. A Miniature Fabry- Perot Interferometer with a Corrugated Silicon Diaphragm Support[J]. IEEE Solid-State Sensor and Actuator Workshop, 1990(4) : 140-144.
  • 10Snyman L W, Bogalecki A, Canning L M. High Frequency Optical Integrated Circuit Design and First Iteration Realisation in Standard Silicon CMOS Integrated Circuitry[C]// IEEE International Symposium EDMO, 2002 (10) :77-79.

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