摘要
通过各向异性腐蚀硅微结构工艺,研究了四甲基氢氧化铵(TMAH)腐蚀液的特性,包括硅(100)晶面腐蚀速率与TAMH溶液浓度、温度、pH值以及过硫酸铵添加剂的关系,并采用原子力显微镜研究了不同腐蚀条件下硅的表面形貌,研究表明随TMAH溶液的浓度的降低和腐蚀温度的提高,腐蚀速率提高,硅腔的表面粗糙度增大;过硫酸铵添加剂明显改善了硅微腔的表面平整度。本研究所确定的最佳腐蚀工艺条件为溶液中TMAH浓度为25%,过硫酸铵添加剂浓度为3%,腐蚀温度80℃。在此工艺条件下腐蚀出了深度为230μm、表面粗糙度小于50nm的硅微腔。
Through the process of an anisotropic wet etching silicon microstructure, the characteristics of TMAH solution are discussed, including the dependence of etching rate of oriented silicon （100） crystal plane on the TMAH concentration, the temperature, pH value and ammonium persulfate additive, and the surface topography under different etching conditions with AFM. The research indicates that the etching rate and surface roughness increase with the TMAH concentration reduced and the solution temperature increased,and ammonium persulfate improves the surface smoothness of Si. Optimal process condition for manufacturing silicon microstructure in the research is that TMAH is 25%, and ammonium persulfate is 3% in solution, and etching temperature is 80℃. The silicon microstructure of 230μm depth,and surface roughness less than 50 nm is manufactured.
出处
《传感技术学报》
EI
CAS
CSCD
北大核心
2006年第3期593-596,共4页
Chinese Journal of Sensors and Actuators
基金
国家自然科学基金资助(50375154)
