摘要
在低压下,以甲烷和氢的混和气为原料,应用热丝 CVD 法,在 Si 基片上生长出了金刚石薄膜。经 X 射线衍射、激光刺曼光谱和扫描电子显微镜分析,生长产物呈多晶金刚石结构。探讨了金刚石薄膜的生长机理。
Vacuum evaporating device which was designed by us is used to grow dia-mond films on the substrate of silicon single crystals from a mixture of CH_4 and H_2 gasesat lower pressure by hot-filament CVD method.The results of X-ray diffraction,Ramanspectrum and SEM analysis show that the films present polycrystalline diamond strueture,the process of the films growth is stable and the repeatability of results is excellent.Mecha-nism of growth of diamond films are also investigated.
关键词
金刚石
薄膜
气相合成
气相沉积法
hot-filament chemical vapour deposition
diamond film
growth by lower pressure phase
