摘要
利用透射电子显微镜(TEM),观测到未见报道的须状微结构,称为非晶须。提出非晶须可能的生长条件是淀积系统中出现大的过饱和气压。X 射线光电子能谱分析表明,非晶硅与其表面SiO_2之间存在化学成分为 SiO_x(0<x<2)的界面过渡区,形成 SiO_2/SiO_x/a-Si(或a-Si:H)结构。与 c-Si 和 a-Si 比较,a-Si:H 薄膜具有最好的表面稳定性。
The surface,the interface and the microstructures of the undoped hydrogenated amorphoussilicon films by RF plasma chemical vapor deposition are investigated.The whisker-like microstructures(amorphous silicon whisker)are observed by transmission electron microscope(TEM).The X-rayphotoelectron spectroscopy(XPS)analysis shows that the SiO_2/SiO_x/a-Si structure in the interface be-tween SiO_2 and amorphous silicon are formed at room temperature.The chemical composition of the tran-sition region of the interface in the SiO_2/a-Si are SiO_x(0<x<2).The experimental results show that thehydrogenated amorphous silicon films are possessed of better surface stability than the c-Si and the a-Si.
关键词
薄膜
非晶态硅
非晶须
表面
微结构
amorphous silicon
film
surface
interface
amorphous silicon whisker
microstructure
