摘要
在配有液Ｎ２冷却Ａｓ快门的分子束外延设备中利用迁移增强外延（ＭＥＥ）方法于低温下生长了ＧａＡｓ／Ａｌ／ＧａＡｓ结构材料。俄歇测量结果表明，用ＭＥＥ方法生长的材料中Ａｌ和ＧａＡｓ之间的互扩散大大减小，在５００℃热处理后也没有引起多大的互扩散。我们还发现在高指数ＧａＡ５（１１３）Ｂ面上用ＭＥＥ方法生长ＧａＡｓ薄膜效果更好。
The GaAs/Al/GaAs structures have been grown by using migration-enhanced epitaxy(MEE)method at low temperature on a molecular beam epitaxy system with a liquid N_2 cooling As shutter.It is shown by Auger profiles that with MEE the interdiffusion between Al and GaAs is reduced by a large amount and heat treatments, up to 500℃, caused no significant interdiffusion. Our results also indicate that MEE method is more efficient for growth of GaAs film on GaAs(113)B high-index surface.
出处
《功能材料与器件学报》
CAS
CSCD
1996年第2期114-118,共5页
Journal of Functional Materials and Devices
基金
国家自然科学基金
