摘要
集成电路圆片级测试探卡主要应用于芯片分片封装前对芯片电学性能进行初步测量。随着集成电路设计和制造技术的发展,芯片焊盘密度日益增加,电路工作速度不断提高,由此产生的寄生电容和寄生电感效应会对传统测试探卡的正常工作造成影响,难以得到正确的测试结果。结合先进的MEMS技术,提出了一种采用铝通孔导电、金属自隔离结构的MEMS探卡,探卡由台阶结构的悬臂梁探针陈列构成,探针的具体结构排列依据待测芯片(DUT)的管脚分布,同时测试探针电学导通电阻小于1Ω.详细叙述了探卡的结构设计和制造方法。
Wafer-level IC test probe card is mainly used in the test of chip＇s electric characters before packaging.With the increase of the chip complexity, and the great improvement of operation speed, traditional probe card can＇t work properly because of the nfluence of the parasitical capacity and parasitical inductance, what＇s more, the density of tips of traditional probe card is limited. So, in this paper, a novel micro mechanical probe card with aluminum-via and self-alignment technology was introduced.Thls kind of probe card consists of an array of tips which are at the bottom of special designed cantilevers. The arrangement of the tips is based on the positions of the DUT＇s pads, The resistance of the probe tips is below 1Ω.The design method of the probe card structure is discussed in details and the special fabrication process is provided.
出处
《仪表技术与传感器》
CSCD
北大核心
2006年第4期12-14,共3页
Instrument Technique and Sensor
