摘要
以五水硝酸铟和乙酰丙酮为原料,以无水氯化锡为掺杂剂,采用溶胶凝胶工艺,用提拉法在石英玻璃基体上制备了ITO透明导电薄膜.采用DTA-TG、XRD、SEM等测试手段对薄膜从凝胶态向结晶态转变过程及微区形貌特点进行了表征,并利用四探针电阻率仪考察了热处理温度、提拉速度、冷却速度、提拉次数等工艺条件对薄膜的导电性能的影响.结果表明:ITO干凝胶膜在600℃热处理温度下完全转化为结晶态,ITO薄膜具有由球形粒子堆积而成的多孔结构;热处理温度与冷却速度均会对ITO薄膜的导电率产生重要影响.
In this experiment, In（ NO3 ） and acetylacetone were selected as the raw materials while the anhydrous SnC14as the dopant. ITO conductive and transparent film was fabricated on the quartz matrix by sol-gel technique and dip-coating method; DTA-TG,XRD,SEM methods were utilized to investigate the phase transformation of ITO film and its micro structural characteristic. Meanwhile, the effects caused by different technical conditions, such as annealing temperature, dipping speed, cooling speed and times of dipping, on the sheet resistance of ITO film are also investigated and analyzed through the four-probe method. The results indicate ： above 600 ℃,ITO film may transform to crystalline state and have porous structure composed of globular particles, while the annealing temperature and cooling speed both have substantial influence on the conductance of ITO film.
出处
《材料科学与工艺》
EI
CAS
CSCD
北大核心
2006年第2期174-177,共4页
Materials Science and Technology
关键词
ITO
溶胶凝胶
提拉法
方电阻
导电率
ITO
sol-gel
dip coating method
sheet resistance
Conductance
