摘要
采用ICP-AES法测定了Ga3+:KTP晶体中掺质Ga3+离子含量,并由此得出Ga3+离子在相应晶体生长体系中的平均分配系数为0.0373;采用静电计和多频测试仪测定并计算出Ga3+:KTP晶体c向的电导率,将其与纯KTP晶体者进行比较。结果发现,Ga3+:KTP晶体c向电导率比纯KTP晶体c向电导率在交流情况下最大降低了两个数量级以上。文中对晶体c向电导率的降低机理进行了探讨。
The content of dopant Ga^3＋ ion in Ga^3＋ ：KTP crystal was measured by ICP-AES method, and the average distribution coefficient in the growth system of Ga^3＋ was obtained （0. 0373 ）. The conductivity along c axis of Ga^3＋： KTP crystal was measured by electrometer and multifrequency measurer, and compared with that of the pure KTP crystal. The result shows that the conductivity along c axis of Ga^3＋ ：KTP crystal was decreased by more two orders of magnitude vs. that of the pure KTP. The mechanism is discussed in this article.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2006年第2期378-380,共3页
Journal of Synthetic Crystals
