摘要
在分析了电池保护电路设计功耗要求的基础上,提出了三种降低功耗的方法,并推导了相应的公式:使用电路休眠技术,减少空闲时不必要的功耗;设计各电路模块的MOS管工作在亚阈值区,减小电路工作时的电流;基准电路中使用耗尽型nMOS管做恒流源,以简单的电路结构,得到与电源电压无关的基准电流和基准电压,从而达到降低功耗的目的。采用这些方法设计出来的CMOS工艺电池保护芯片,休眠时电流为59.2nA,工作时电流也不超过2.46uA,设计取得了成功。
Based on the analysis of the design requirement of battery protection circuit chip,three methods are proposed： Use the sleep mode to reduce unnecessary power consumption; Make the circuit work in the subthreshold region other than the traditional circuit; Depletion transistors are used in reference circuit in order to simplify the circuit. In the end, the simulation result indicates that the design is successful with HSPICE. The chip has been signed off with low-power consumption and low temperature coefficient.
出处
《微电子学与计算机》
CSCD
北大核心
2006年第4期174-176,共3页
Microelectronics & Computer
关键词
低功耗技术
休眠技术
耗尽型MOS管
亚阈值区
Low-power consumption, Deeper sleep, Depletion MOS transistor, Subthreshold region
