摘要
垂直腔面发射激光器Ｐ型λ／４分布布喇格反射镜由于在ＡｌＡｓ／Ａｌ０．１Ｇａ０．９Ａｓ材料λ／４堆积层界面处存在大的势垒差，使得ｐ型ＤＢＲ串联电阻很大。文章报道一种利用Ｚｎ扩散工艺，使ＡｌＡｓ／Ａｌ０．１Ｇａ０．９Ａｓλ／４堆积层Ａｌ，Ｇａ互扩散，形成ＡｌｘＧａ１－ｘＡｓ混熔层或在界面处形成Ａｌ，Ｇａ组分渐变的ＡｌｘＧａ１－ｘＡｓ缓变层，从而降低ｐ型ＤＢＲ串联电阻的方法。利用这种方法。
Due to the differences of the potential barriers at AlAs/Al 0.1 Ga 0.9 As hetero-interfaces of λ /4 stack layer in p-type λ /4 distributed Bragg reflector (p-DBR) of vertical cavity surface emitting lasers(VCSELs),p-DBR has very large series resistance.A method to reduce this series resistance by Zn diffusion is reported,which is that Al,Ga inter-diffusion in AlAs/Al 0.1 Ga 0.9 As λ /4 stack layer is carried out to form Al x Ga 1- x As mixed-melted layer,or to form Al x Ga 1- x As graded layer with Al,Ga component grading at the interface.By use of this method,room temperature CW VCSELs are successfully developed.
出处
《半导体光电》
CAS
CSCD
北大核心
1996年第3期243-247,共5页
Semiconductor Optoelectronics
基金
国家自然科学基金
关键词
半导体器件
激光器
扩散
Semiconductor Devices,Vertical Cavity Surface Emitting Lasers,Distributed Braga Reflectors,Diffusion
