摘要
本文报道了单晶ZnSe、ZnTe和CdTe薄膜在Ge(100)衬底上的MBE生长,用RHEED观察了其生长规律,并对样品作了X光衍射及SIMS等测试分析。观察到衬底与外延层之间存在晶向偏角。对这一现象进行了理论解释。
Single crystal ZnTe, ZnSe and CdTe films were grown on (100) Ge substrates by molecular
beam epitaxy (MBE). The growth processes were observed and analyzed in situ by reflection
high-energy electron diffraction (RHEED). The epitaxial layers and interfaces were evaluated
by X-ray diffraction and SIMS measurements, espectively.It has been observed that there
is misorientation between the epitaxial layer and its substrate, which can be explained in a theoretical
model.
