摘要
本文计算了由毫微秒和微微秒激光脉冲照射而在硅晶体中产生的晶格温度、载流子浓度和载流子温度的时间演变和空间分布,本文用PDECOL软件包计算一组关于晶格温度、载流子浓度、载流子温度和激光强度的偏微分方程组的数值解。计算表明,热载流子的能量弛豫时间应为1ps或小于1ps,计算的熔化阈值与发表的实验结果是一致的。
The temporal evolution and spatial distribution of the lattice temperature, carrier concentration
and carrier temperature induced in silicon by nanosecond and picosecond laser pulses
are calculated. A set of simultaneous partial equations for lattice temperature, carrier concentration,
carrier temperature and laser intensity is numerically solved by using the computer software
package, PDECOL. It is shown that the energy relaxation time of hot carriers should
be about lps or less. The calculated melting thresholds are in agreement with the experimental
thresholds.
关键词
硅晶体
激光脉冲
激光退火
物理量
laser annealing
Silicon
Nanosecond pulse
Picosecond pulse
