摘要
文章简要地叙述了光激电流瞬态谱(PICTS)及恒流光电导(CCPC)设备的建立过程及测量方法。并首次用二种方法结合起来以研究掺铁半绝缘磷化铟(InP)中深能级的热电离能,载流子的发射与俘获特性,杂质波函数的局域程度及电子与晶格之间的相互作用。并给出了铁能级在禁带中的确切能量位置。
The constant current photo-conductivity(CCPC) was used in combining with the photoinducedcurrent transcient spectroscopy (PICTS) to study the deep level in iron doped semiinsulatingInP. The information on the characteristics of carrier emission and capture process,the localization of deep level wave function as well as the parameter of interaction between electronand phonon are given.The accurate energy level of Fe^(2+) is given according to theco(?)figuration coordinate diagram.
关键词
掺铁
磷化yin
深能级
半导体材料
Semi-Insulating InP
Deep leve
Spectral distribution of photo ionization cross sections
Electron-phonon interaction
