摘要
A stable δ- and β-bismuth trioxide was prepared at room temperature by vacuum vapor-phase oxidation. The average crystal size of products was 14.6 nm (by XRD), the d(0.5) value was in the range from 62 nm to 69 nm, and geometric standard deviation(GSD) was from 1.42 to 1.64. The results show that δ-Bi2O3 is formed when quenching rates is rapid and β-Bi2O3 is formed when it is slow. The size of grains increases with rising reaction temperature, flow rate of carrier gas, residual pressure of system and longer growing time of grains.
A stable δ- and β-bismuth trioxide was prepared at room temperature by vacuum vapor-phase oxidation. The average crystal size of products was 14.6 nm （by XRD）, the d（0.5） value was in the range from 62 nm to 69 nm, and geometric standard deviation（GSD） was from 1.42 to 1.64. The results show that β-Bi2O3 is formed when quenching rates is rapid and β-Bi2O3 is formed when it is slow. The size of grains increases with rising reaction temperature, flow rate of carrier gas, residual pressure of system and longer growing time of grains.
出处
《中国有色金属学会会刊：英文版》
CSCD
2006年第1期173-177,共5页
Transactions of Nonferrous Metals Society of China
基金
Project(03SSY4056) supported by the Bureau of Science and Technology of Hunan Province, China
Project(04C034) supported by the Bureau of Education of Hunan Province, China
关键词
三氧化铋
真空气相氧化
纳米粒子
XRD
生长周期
δ- bismuth trioxide
β-bismuth trioxide
vacuum vapor-phase oxidation
nanometer particles
