摘要
用固相反应法制备了La0.7-xGdxSr0.3MnO3(x=0、0.1、0.2、0.3、0.4、0.5、0.6、0.7)多晶材料,研究了它们的电阻温度系数(TCR)。实验结果表明,Gd掺杂将引起电阻率曲线的急剧变化,导致出现大的TCR;随Gd掺杂的增加,TCR在x=0.3出现峰值,然后随掺杂量的增加逐步降低。体系出现大的TCR来源于Gd掺杂引起的晶格畸变和额外磁性耦合。
A series of polycrystal samples of La0.7-xGdxSr0.3MnO （x=0, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7） were prepared by standard solid reaction method. The temperature coefficient of resistance （TCR） of these samples have been studied. Experimental results show that the Gd doping canses a steep change of resistance, resulting in large TCR. With the increase of Gd content, a TCR peak appears at x=0.3, and then the TCR decreases gradually with further increasing doping amount. This large TCR should result from lattice distortions and extra magnetic coupling induced by Gd^3＋ ions.
出处
《磁性材料及器件》
CAS
CSCD
2006年第1期16-18,25,共4页
Journal of Magnetic Materials and Devices
基金
国家自然科学基金重点项目(10334090)
