摘要
A novel planar DGDT FDSOI nMOSFET is presented, and the operation mechanism is discussed. The device fabrication processes and characteristics are simulated with Tsuprem 4 and Medici. The back-gate n-well is formed by implantation of phosphorus at a dosage of 3 × 10^13 cm^-2 and an energy of 250keV and connected directly to a front-gate n^＋ polysilicon. This method is completely compatible with the conventional bulk silicon process. Simulation results show that a DGDT FDSOI nMOSFET not only retains the advantages of a conventional FDSOI nMOSFET over a partially depleted （PD） SOI nMOSFET--that is the avoidance of anomalous subthreshold slope and kink effects but also shows a better drivability than a conventional FDSOI nMOSFET.
提出了新型全耗尽SOI平面双栅动态阈值nMOS场效应晶体管,模拟并讨论了器件结构、相应的工艺技术和工作机理.对于nMOS器件,背栅n阱是通过剂量为3×1013cm-2,能量为250keV的磷离子注入实现的,并与n+前栅多晶硅直接相连.这项技术与体硅工艺完全兼容.通过Tsuprem4和Medici模拟,发现全耗尽SOI平面双栅动态阈值nMOSFET保持了传统全耗尽SOI nMOSFET的优势,消除了反常亚阈值斜率和kink效应,同时较传统全耗尽SOI nMOSFET有更加优秀的电流驱动能力和跨导特性.
