摘要
研究了用HP 4500型 ICP-MS方法分析半导体用浓氢氟酸中的痕量杂质.在半导体业,所用试剂要求在10 ng·ml-1级.采用样品直接稀释法,在优化的实验条件下,采用HP 4500型ICP-MS实现了样品中Na,Mg,Al,K,Ca,Cr,Fe,Ni,Cu,Pb,10种杂质元素的同时测定,降低了样品玷污的可能性.屏蔽炬系统和冷等离子体的使用,很大程度上提高了检出限,使K,Ca和Fe获得令人满意的测量结果.所有元素的测定均在相同条件下进行,检出限为0.8～20 ng·ml-1.
Abstract： The HP 4500 ICP-MS analysis of trace impurities in concentrated hydrofluoric acid used in semiconductor production was described. 10 ng·ml^-1 level determinations are required for all reagents.Sample preparation was just simple dilution. Low dilu- tion factors were used to analyze the acid thereby minimizing sample contamination and allowing for the best possible detection limits. Ten elements were analyzed. The Shied Torch and cool plasma conditions made the analysis of K, Ca and Fe possible. All elements were analyzed under the same conditions. Detection limits are in range of 1 to 30 ng·ml^-1. MSA calibration curves in this concentration range are linear.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2005年第6期948-950,共3页
Chinese Journal of Rare Metals
