摘要
本文介绍了国际上最新的10万门FPGA系列，该产品由美国GateField公司研制，采用Flash存储器作为控制码存储单元以及一种和掩膜式门阵列类似的“细粒”可编程逻辑单元，其单元面积大大小于现在市场上的SRAM结构和EPROM结构的FPGA及EPLD单元，目前采用0．8μm工艺已达10万门高密度。本文对其多层次“瓦片”式结构也作了较详细介绍。
This paper introduce a new advanced 100K gate FPGA family which is developed by Gate Field company at Fremont, California of the United states. This high density FPGAs are based on a flash -EPROM-controlled architecture and fine - grained programmable cell which is much smaller than SRAM - based cell. So it already reaches 100K gate high density in FPGA area with only 0. 8μm process.Its tiles architecture and other features are also described in detail.
出处
《微处理机》
1996年第3期60-64,共5页
Microprocessors
