摘要
通过对序进应力加速寿命试验的研究,提出了一种快速评价半导体器件失效激活能的方法,建立了计算失效激活能的理论模型。并对硅pnp三极管3CG120进行额定功率下,170-345℃范围内的序进应力加速寿命试验,快速提取器件失效敏感参数hFE与所施加应力的关系,根据模型对器件退化过程中的失效机理进行研究、计算,从而确定其对应的失效激活能。
Basing on the study of progressive stress accelerated life test, a rapid evaluation method for electronic device＇ s activation energy is proposed, and the theory model is constructed. A progressive stress accelerated life test of silicon pnp transistors 3CG120 was carried out under the condition of rated power capability and temperature ramp from 170-345℃. And the relationship of stress on samples and the degradation of sensitive parameters hFE is fleetly extracted using the model. The failure mechanisms in the degradation progress of the samples, corresponding activation energy was calculated.
出处
《半导体技术》
CAS
CSCD
北大核心
2006年第2期122-126,共5页
Semiconductor Technology
基金
国防科工委基础研究课题资助项目(Z032005A001)
关键词
激活能
加速寿命试验
快速评价
activation energy
accelerated life test
rapid evaluation
