摘要
提出了一种新的微电子器件快速评价方法-温度斜坡法,建立了确定失效激活能的新模型和寿命外推新模型,使用此模型可计算出单支器件的失效激活能并外推其寿命.同时,该方法的试验温度范围较宽,可以触发不同温度范围的多种退化模式,实现对不同退化机理的研究.
A new method, temperature ramp method for rapid evaluation of reliability of microelectronic devices,is proposed and a new model is set up. Using the new model, the microelectronic device＇s activation energy can be worked and its life can be extrapolated. The range of temperatures used in experiments is so wide that different degradation modes can take place,and the problem of multi-degradation mechanisms can be studied.
关键词
温度斜坡
激活能
多退化机理
temperature ramp
activation energy
multi-degradation mechanisms
