摘要
反应离子刻蚀(RIE)的二维物理模型,包括各向同性和各向异性两部分。该速率公式的参数由实验提取,随RIE工艺参数而变化。采用线算法和C++编写用于模拟RIE刻蚀的计算机模拟软件,该软件可以对各种不同的起始条件进行模拟。对公式中的角度计算过程中可能出现的各种情况分别进行了讨论。为了确保软件的精度和稳定性,算法采用了添加点和减少点的方法,最后给出模拟软件的模拟结果,与实验结果比较吻合。
A two-dimensional （2D） physical model of reactive ion etching （RIE） which includes isotropic and anisotropic components is presented. The physical model is analyzed. The parameters of the model were extracted from experiments, and they varied with the process parameters of RIE. A two-dimensional simulator is programmed by C＋＋ and its calculation method is based on the string model. The simulator can simulate profiles for various initial conditions. For every possible instance in the simulation, the angles in this equation are discussed, and also for a stable and accurate simulation, point insertion and point elimination are used. At last the simulation profile is presented and it fits the experiment well.
出处
《电子器件》
EI
CAS
2005年第4期736-739,共4页
Chinese Journal of Electron Devices
基金
国家杰出青年科学基金资助课题(50325519)
