摘要
用稀土离子Ｙ（３＋）、Ｌａ（３＋）对（Ｓｒ，Ｃａ）ＴｉＯ３掺杂，以Ｂａ－Ｓｉ－Ａｌ玻璃为助熔剂，在１３５０～１４５０℃还原性气氛中烧成，获得工艺性能良好、烧结温度较低、晶粒电阻率低（１０（－２）Ω·ｃｍ）、非线性高（α达１０以上）的陶瓷材料。在制备过程中省略了以往用碱金属离子涂覆并进行热扩散的工序。用缺陷化学理论，根据测量的ＩＣＴＳ谱、Ｉ－Ｖ特性和Ｃ－Ｖ特性系统研究了Ｙ（３＋）、Ｌａ（３＋）掺杂对晶粒半导化、压敏特性和介电特性的影响。热处理过程中，Ｏ－的化学吸附是这类陶瓷产生晶界势垒的主要原因。
By means of doping(Sr,Ca) TiO_3 with (Y￣(3+)、La￣(3+),using Ba-Si-Al as flux and firing at 1350～1450℃ under reduction atmosphere,a ceramic material of excellent processability is prepared.It is characterized by its low firing temperature,low crystal resistivity(10￣(-2)Ω·cm) and high non-linearity.The typical process of alkali metal coating and thermo-diffusion is eliminated.The effect of doping Y￣(3+)、La￣(3+) on grain semiconducting, voltage-sensitive characteristic and dielectric characteristic are studied on the basis of defect chemical theory,and measured ICTS spectrum,I-V characteristic and C-V characterristic system.During the course of heat treatment,grain boundary barrier is mainly caused by O￣- chemical absorption.
出处
《电子元件与材料》
CAS
CSCD
1996年第2期10-14,共5页
Electronic Components And Materials
关键词
陶瓷
锶
钙
TIO3陶瓷
钇离子
镧离子
掺杂
varistors,capacitors,dope,grain semiconducting,grain boundary
