摘要
本文指出,用α-Si∶H膜钝化CH 4081型中规模电路能明显地降低反向漏电流,使场开启电压提高;配对管开启电压匹配良好,从而使动态工作电压由5.0V下降到3.0V。半绝缘性α-Si∶H膜对外界干扰有屏蔽效果,可使C—MOS器件阈值电压的负漂移减小。研究了α-Si∶H钝化膜的抗高能粒子的辐照作用,仅2000～3000(?)厚的α-Si∶H膜能使CH4081电路的抗辐照能力由10^(10)e/cm^2提高到大于10^(12)e/cm^2(1.2MeV)。钝化后的C—MOS电路自然存放数年后,电路参数基本稳定。
In this paper, it has been shown that passivating CH4081 MOS with α-Si:H film can significantly reduce the reverse leakage current, increase the field open voltage, and improve the match of the open voltage for coupling devices, so as to decrease the dynamic work voltage from 5.0V to 3.0V.
Since the semi-insulator α-Si:H film has such capability as shielding devices from outside disturbance, it can make the negative drift of thieshold voltage in C-MOS ICs dropped down. It has also been studied that the films offer opposition to the radiation of particles with high energy. The ability of anti-radiation has increased from 1010e/cm2 to 1012e/cm2 (1.2MeV) for CH4081 ICs covered with the film of only 2000-3000A. The electrical parameters of passivated C-MOS ICs remain unchanged after naturally stored for 4-5years.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1989年第1期64-69,共6页
Research & Progress of SSE
