摘要
为了消除辐照损伤，获得准确的目标电阻率，中子嬗变掺杂区熔硅（ＮＴＤＦＺＳｉ）通常采用７５０～８５０℃－２ｈ的退火工艺。实践中发现，采用上述工艺退火后的ＮＴＤＦＺＳｉ在大于１１５０℃－５ｈ退火时，会出现电阻率下降的现象，下降幅度在１０％～３０％左右。不中照的ＦＺＳｉ则没有观察到这种现象。这表明，在１１５０℃以上长时间退火时，ＮＴＤＦＺＳｉ中产生了过剩载流子，本文研究了这种现象产生的机理及其与辐照通量和原始晶体质量的关系。实验表明原始晶体微缺陷密度越高，辐照通量越大，电阻率偏离的程度越明显。本文认为多余载流子的产生来源于中子辐照造成的晶格损伤缺陷，并与原始单晶缺陷有关。
In order to remove irradiation damage and achieve the exact target resistivity,the annealing technology is usually used for NTDFZSi at 750～850℃- 2h.It is found in practice that the resistivrty of NTDFZSi annealed with normal technology decreases about 10%～30% by annealing above 1150℃-5h.The results indicate that the excess carriers are generated in NTDFZSi for the annealing temperature above 1150℃.In this paper,the generation mechanism of excess carriers has been investigated,and the relationship between the excess carriers and the irradiation flux,quality of asgrown FZSi has been discussed.The experimental results show that the concentration of excess carriers increase when the concentration of as-grown micro-defects and irradiation flux are high.We think that the excess carriers are generated from the lattice damage defects caused by the neutron irradiation,and may be affected by the as-grown defects of FZSi.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1996年第2期92-95,共4页
Acta Electronica Sinica
关键词
辐照损伤
中子嬗变
掺杂区熔硅
载流子
退火
NTDFZSi,Irradiation damage,Micro-defects,Thermal stability of resistivity,Carrier
