摘要
聚焦芯片功耗密度、水平互连焦耳热和垂直互连焦耳热三种温升因素,构造二维和三维集成电路的热阻分析模型,基于2003年国际半导体技术发展路线图(2003-ITRS),计算二维和三维集成电路的热阻和温升参数,给出热阻二维图和温升三维图。分析结论为热阻参数是严重影响二维和三维集成电路发展的瓶颈。
Focusing on three factors of chip power density, horizontal and vertical interconnection joule heating, models for computing thermal resistance of 2D- and 3D-IC＇s are constructed. Based on 2003-ITRS data, thermal resistance and temperature increase parameters of 2D- ＆ 3D-IC＇s are calculated. Thermal resistance plot of 2D-IC and temperature increase plot of 3D-IC＇s are presented. It is concluded that thermal resistance parameter is the bottle- neck in the development of 2D- ＆- 3D-IC＇s.
出处
《微电子学》
CAS
CSCD
北大核心
2005年第5期482-485,共4页
Microelectronics
基金
江苏省教育厅自然科学研究基金资助项目(04KJB310126)
关键词
热阻
温升
模型
三维集成电路
Thermal resistance
Temperature increase
Model
3-D integrated circuit
