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内部硅化法制备低成本C/SiC复合材料 被引量:11

C/SiC Composites Prepared by Inner Siliconizing Process
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摘要 采用内部硅化法制备了低成本C/SiC复合材料,通过三点弯曲法表征了复合材料的强度,采用X射线衍射(XRD)分析了基体组成,通过扫描电镜(SEM)研究了纤维/基体界面和复合材料断裂面的微观结构。结果表明,纤维表面沉积CVD-SiC保护涂层能够有效保护碳纤维不被硅侵蚀,调整硅粉和酚醛树脂配比使C∶Si摩尔比等于10∶9,可消除SiC基体中的残余自由硅。研制的低成本2D C/SiC复合材料的弯曲强度和剪切强度分别达到247MPa与13.6MPa。2D C/SiC复合材料的断裂行为呈现韧性破坏模式,在断裂面存在大量的拔出纤维,复合材料的断裂韧性(KIC)达到12.1MPa.m1/2。 C/SiC composites were prepared by inner siliconizing.process. The strength, matrix composition and microstructure of the composites were investigated by three-piont-bending method, XRD and SEM. The results show that CVD-SiC coating can protect the carbon fibers from attack by melting silicon. The SiC matrix without silicon is made when the molar ratio of C to Si is 10 : 9 by controlling the ratio of phenolic resin and silicon powder. The flexural strength and shear strength of the C/SiC composites are 247MPa and 13.6MPa respectively. The failure module of the C/SiC composites exhibit typical toughness fracture module with many pulled-out fibers in the cross-section of the composite fracture specimens, the fracture toughness(Kic)of the composite is 12.1MPa · m^1/2.
出处 《材料工程》 EI CAS CSCD 北大核心 2005年第9期41-44,52,共5页 Journal of Materials Engineering
关键词 液相渗硅技术 碳/碳化硅复合材料 界面涂层 硅化处理 liquid silicon infiltration C/SiC composite interface coating siliconizing
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  • 1张长瑞,陈朝辉,张凌,李永清,周安郴,周新贵.先驱体转化法制备碳纤维增强碳化硅复合材料的研究[J].复合材料学报,1994,11(3):26-32. 被引量:15
  • 2闫联生,宋麦丽,邹武,王涛.高温处理对碳纤维及其复合材料性能的影响[J].宇航材料工艺,1998,28(1):18-21. 被引量:8
  • 3PATTERSON M C, FEHRENBACHER L L. Generic low cost fabrication technologies for advanced composite rocket thrusters[A]. AIAA 96-3266, 32rd AIAA/ASME/ SAE/ASEE Joint Propulsion Conference & Exhibit[R]. Los Angeles: AIAA ,1996.34--39.
  • 4NASLAIN R. High temperature ceramic matrix composites[M].London.. Woodhead Publications, 1993. 735-741.
  • 5PREWO K M. Fiber reinforced ceramics: new opportunities for composite materials[J]. Am Ceram Soc Bull, 1989, 68(2) :395-399.
  • 6BESMANN T M, LOWDEN R A. Chemical vapor Infiltration[A]. Proceeds of the 11th International Conference on Chemical Vapor Depostion 1990[C]. Pennington NJ: Electrochemical Society, 1990. 482-489.
  • 7STINTON D P, CAPUT() A J and LOWDEN R A. Synthesis of fiber-reinforced SiC composites by chemical vapor deposition[J].Am Ceram Soc Bull, 1986, 64 (2):347-350.
  • 8KOCHENDORFER R. Liquid silicon infiltration -a fast and low cost CMC manufacturing process[A]. Proc 8th Internal Conference on Composite Materials ICCM-8[C]. Honolulu: ICCM,1991. 231-234.
  • 9KRENKEL W and LUTZENBURGER N. Near net shape manufacture of CMC components[A]. Proc 12th Internal Conference on Composite Materials ICCM-12[C]. Paris: ICCM, 1999. 108-123.
  • 10KOCHENDORFER R and LUTZENBURGER N. Application of CMC made via the liquid silicon infiltration (LSI) technique[A].Proc 8th Internal Conference on Composite Materials ICCM-8[C]. Honolulu: ICCM, 1991. 234-239.

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