摘要
硫化锌掺杂二氧化硅(以下简用ZnS+SiO2表示)靶材主要用于CD-RW,DVD-RAM光盘,它通过溅射方法在光盘上形成一层保护膜,以保证光盘的记录性能不受外界条件的影响。靶材的密度越高,溅射形成的膜的质量越好。ZnS+SiO2靶材可通过热等静压工艺或热压工艺获得,本实验采用真空热压工艺对ZnS+SiO2靶材致密化进行了研究,分析了主要热压工艺参数对ZnS+SiO2靶材密度的影响。最适宜的热压温度为1250℃,压力为36MPa,时间为3h,采用此工艺参数制备的靶材相对密度达99.2%。
Zinc sulfide doped Silicon dioxide target （ZnS＋Si02） is mainly used in optical recording mediums such as CD-RW discs and DVDRAM discs. It can form a protective layer on the discs by using sputtering technique, which will protect the recording performance of the discs free from the influence of the outside. The higher density of the target, the better quality of the sputtering protective layer will be achieved. Zinc sulfide and Silicon dioxide target （ZnS＋Si02） can be produced by vacuum HP process and HIP process. The densification of zinc sulfide doped slicon dioxide target by using vacuum HP process has been experimetall studied. The effect of main HP process parameters on density of ZnS＋SiO2 target was investigated. The target that the relative density is 99.2% is obtained when the HP parameters are as follows：l 250℃ in tempettme 36MPa in pressure and 3 h in duration.
出处
《稀有金属快报》
CSCD
2005年第9期23-26,共4页
Rare Metals Letters
基金
国家"863"西部新材料行动基金资助项目(2003AA31X010)
