摘要
The composition, elastic strain and structural defects of InCaN/CaN multiple quantum wells （MQWs） are comparatively investigated by using x-ray diffraction （XRD）, transmission electron microscopy and Rutherford backscattering/channelling. The InGaN well layers are fully strained on CaN, i.e. the degree of relaxation is zero. The multilayered structure has a clear defined periodic thickness and abrupt interfaces. The In composition is deduced by XRD simulation. We show how the periodic structure, the In composition, the strain status and the crystalline quality of the InGaN/GaN MQ, Ws can be determined and cross-checked by various techniques.
The composition, elastic strain and structural defects of InCaN/CaN multiple quantum wells （MQWs） are comparatively investigated by using x-ray diffraction （XRD）, transmission electron microscopy and Rutherford backscattering/channelling. The InGaN well layers are fully strained on CaN, i.e. the degree of relaxation is zero. The multilayered structure has a clear defined periodic thickness and abrupt interfaces. The In composition is deduced by XRD simulation. We show how the periodic structure, the In composition, the strain status and the crystalline quality of the InGaN/GaN MQ, Ws can be determined and cross-checked by various techniques.
基金
Supported by the National Natural Science Foundation of China under Grant No 10375004, and the Key Laboratory of Heavy Ion Physics （Peking University）, Ministry of Education of China.
