摘要
With in situ optical emission spectroscopy （OES） diagnosis on VHF-generated H2 ＋ SiH4 plasmas,and with the measurements of deposition rate and structure of μc-Si. H thin films fabricated with VHFPECVD technique at different substracte temperature, influence of substrate temperature on the deposition of μc-Si.H thin film and on its structural properties have been investigated. The results show that with the increase of substrate temperature,the crystalline volume fraction Xc and average grain size d are enhanced monotonously, but the deposition rate increases firstly and then decreases. The optimized substrate temperature for μc-Si：H thin films deposition under our current growth system is about 210 ℃ ,at which deposition rate O. 8 nm/s of pc-Si;H thin film with Xc-60% and d-9 nm can be obtained.
基金
SupportedbytheDevelopmentPlanoftheStateKeyFundamen talResearchofChina(GrantNo.G2000028202and G2000028203),theKeyProjectofEducationMinistryofChina (GrantNo.02167)andtheStartupScientificResearchProgram ofJinanUniversityofChinaForPersonwithExcellentAbility.
