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一种计算载流子占据杂质能级的概率的新方法 被引量:1

New method of calculating the probability function of carriers occupying the impurity level
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摘要 利用费米分布函数和杂质电离的热平衡理论计算了载流子在杂质能级上的占据概率,其结果与传统的热力学统计理论及计算化学势方法得到的结果完全一致.本方法运算简单,且物理意义清晰. The probability functions of carriers occupying the impurity level are calculated by applying the Fermi-Dirac distribution function and the thermal-equilibrium theory of the impurity ionization, the result accord with that obtained by applying the conventional thermodynamic and statistical theory and the method of computing the chemical potential. The new method is very simple, and has very clear physical significance.
作者 李轲
出处 《大学物理》 北大核心 2005年第9期57-60,共4页 College Physics
关键词 载流子 费米分布函数 自旋 杂质能级 carrier Fermi distribution function spin impurity level
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同被引文献5

  • 1刘恩科,朱秉升,罗晋生.半导体物理学[M].北京:国防工业出版社,2006.
  • 2Charles A. Ginsburg. Quantum statistics using equivalent Fermi-Dirac and Bose-Einstein distributions[J]. Chenical Physics Letters, 1982,88(3) : 330-332.
  • 3N. N. Kalitkin, I. V. Ritus. The smooth approximation of Fermi-Dirac functions[J].USSR Computational Mathematics and Mathematical Physics,1986,26(2) :87-89.
  • 4P. K. Chakraborty,S. K. Biswas, K.P. Ghatak. On the modification of the Fermi-Dirac distribution function in degenerate semiconductors[J]. Physica B: Condensed Matter,2004,352(1-4):111-117.
  • 5V. Donchevd,N. Shtinkov,K. Germanova. Effect of random defect densuty fluctuations on the Fermi level in highly compensated semiconductors[J]. Materials Science and Engineering, 1997, B47 : 131-136.

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