摘要
本文对采用双坩埚提拉法(DCCZ)生长的化学计量比LiNbO3晶体中出现的机械双晶、组分过冷、包裹体等宏观生长缺陷进行了观察和分析。结果表明机械双晶通常以{102}和{104}面族为双晶面,而不是以前文献报道的{102}和{012}面族;化学计量比LiNbO3晶体双坩埚提拉法生长与同成份晶体生长不同,前者是助熔剂生长体系,生长速度稍快或温度较小的波动就会导致组分过冷,而后者属于纯熔体生长体系,不容易产生组分过冷;包裹体是由于组分过冷生长时界面失稳夹入熔体所造成的。由于这些缺陷的存在都会严重影响单晶的获得率和质量,为此,我们通过大量实验研究后提出了可以减少和避免这些生长缺陷提高晶体质量的方法。
Phenomena of mechanical twinning, constitutional supercooling, inclusions of the stoichiometric LiNbO3 crystal grown by double crucible Czochralski method were observed and analyzed in this paper. It was found that these defects would greatly influence on the quality of crystal. Therefore a large amount of experimental studies were carried out and some points on increasing the quality of crystal were proposed based on these studies.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2005年第4期671-675,共5页
Journal of Synthetic Crystals
基金
国家863项目(No.2002AA311110)
上海市光科技行动计划项目(No.015261046)
关键词
双坩埚提拉法
化学计量比铌酸锂
机械双晶
组分过冷
包裹体
缺陷
double crucible Czochralski method
stoichiometric LiNbO3
mechanical twinning
constitutional supercooling
inclusion
defects
