期刊文献+

直流弧光放电等离子体CVD金刚石薄膜中的晶体类型与特征 被引量:4

CRYSTAL MORPHOLOGY AND FEATURE OF THE DIAMOND FILMS BY DC ARC DISCHARGE
在线阅读 下载PDF
导出
摘要 采用自主研制的直流弧光放电等离子体CVD设备,以甲烷和氢气为气源,在YG 6硬质合金基体上制备出主显晶面为(100)、(111)以及纳米晶粒的金刚石薄膜涂层。SEM观测其晶体类型主要为立方体、八面体、立方八面体,其中以立方八面体为主。随着碳源气体浓度的增加,金刚石晶体的形态会呈现从八面体-立方八面体-立方体顺序转变的趋势;而薄膜的表面形貌呈现从主显(111)晶面-(111)与(100)晶面混杂-主显(100)晶面顺序转变的特征。此外,CVD金刚石薄膜中还存在有许多类似接触孪晶、贯穿孪晶、复合孪晶,以及球形或聚晶晶粒形态的晶体,并且多数孪晶属于类似{111}复合孪晶结构。 Polycrystalline diamond films with surface morphology of {100} and {111} facets were synthesized on a abraded cemented carbide tungsten tool from a gas mixture of methane and hydrogen by DC arc discharge plasma CVD . The morphology of diamond film observed by SEM. Showed that with increasing carbon gas concentration,the film morphology changed from {111} to {100} and the diamond particle shape varied from octahedron to cubic. There also exist a lot of twin-like particles and ballas type particles in the diamond films.
出处 《矿物岩石》 CAS CSCD 北大核心 2005年第3期100-104,共5页 Mineralogy and Petrology
基金 四川省教育厅自然科学重点科研项目(编号2003A142) 四川省重点科技攻关项目(05GG021-001)
关键词 金刚石 金刚石薄膜 直流弧光放电等离子体CVD YG6硬质合金 晶体类型 diamond diamond film DC arc discharge plasma chemical vapor deposition tungsten carbide crystalline morphology
  • 相关文献

参考文献16

  • 1Cappelli E,Pinzari F,Ascarelli F, et al. Diamond nucleation and growth on different cutting tool materials: Influence of substrate pretreatments [J ]. Diamond and Related Materials, 1996,5: 292-298.
  • 2吴键.[D].广州工业大学工学,2002.
  • 3陈靖,王小平,张兵临.金刚石涂层与硬质合金刀具附着力的研究进展[J].真空与低温,1998,4(2):121-124. 被引量:7
  • 4Busch J V,Dismukes J P. Trends and market perspectives for CVD diamond[J]. Diamond and Related Materials,1994,3:295-302.
  • 5黄元盛,罗承萍,邱万奇.化学气相沉积金刚石薄膜的晶体缺陷和杂质[J].中国表面工程,2004,17(1):5-9. 被引量:12
  • 6傅慧芳,刘顺生,颜恩涛,陈素纯.直流弧光放电等离子体化学气相法生长高品质金刚石薄膜[J].科学通报,1993,38(17):1585-1587. 被引量:8
  • 7May P W. Diamond thin films: a 21st-century material[J]. Phil Trans Roy Soc Lond A. 2000,358:473-95.
  • 8Wild C,Koidl P,Muller-Sebert W, et al. Chemical vapour deposition and characterization of Smooth { 100}-facted diamond film [J]. Diamond and Related Materials, 1993,2:158.
  • 9Barrat S,Dieguez l,Michel H, et al. Morphometric analysis of diamond crystals elaborated by microwave plasma assisted CVD[J]. Diamond and related Materials, 1994,3: 520-524.
  • 10Clausing R E,Heatherly L,specht E. Textures and morphologies of chemical vapor deposited (CVD) diamond[J]Diamond and Related Materials, 1992,1:411-415.

二级参考文献10

共引文献35

同被引文献82

  • 1恩云飞,杨银堂,孙青.电子回旋共振等离子体技术新进展[J].西安电子科技大学学报,1995,22(4):425-434. 被引量:2
  • 2陈素纯,傅慧芳,颜恩涛.矿物材料合成的直流弧光法[J].大地构造与成矿学,1996,20(2):186-187. 被引量:1
  • 3刘缠牢,梁海锋,严一心.脉冲电弧沉积类金刚石薄膜特性的研究[J].表面技术,2006,35(4):37-39. 被引量:3
  • 4May P W.Diamond Thin Films:A 21st-century Material[J].Phil.Trans.Roy.Soc.Lond.A,2000,358:473-95.
  • 5Chen W,Lu X,Yang Q,et al.Effects of Gas Flow Rate on Diamond Deposition in a Microwave Plasma Reactor[J].The Solid Films,2006,515:2164-2166.
  • 6Zhu W,Inspektor A,Badzian A R,et al.Effects of Noble Gases on Diamond Deposition from Methane-hydrogen Microwave Plasma[J].Japanese Journal of Applied Physics,1990,68:1489.
  • 7Matsumoto S,Hino M,Toyohiko K.Synthesis of Diamond Films in a RF Induction Thermal Plasma[J].Applied Physics Letters,1987,51:737-739.
  • 8Han Y S,Kim Y K,Lee J Y.Effects of Argon and Oxygen Addition to the CH4-H2 Feed Gas on Diamond Synthesis by Microwave Plasma Enhanced Chemical Vapor Deposition[J].Thin Solid Films,1997,310:39-46.
  • 9Knights J C,Lujan R A,Rosenblum M P,et al.Effects of Inert Gas Dilution of Silane on Plasma-deposited a-Si:H Films[J].Applied Physics Letters,1981,38(5):331-333.
  • 10Shih H C,Hsu W T,Hwang C T,et al.Application of Nickel Plating for the Synthesis of Chemical Vapour Deposition of Diamond on Steels[J].Thin Solid Films,1993,236(1-2):111-114.

引证文献4

二级引证文献15

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部